Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress
| Autor: | Paul Ronsheim, Michael P. Belyansky, Anita Madan, M. Chace, J. Kempisty, Y. Li, Yun-Yu Wang, S. Molis, D. Yang, N. Klymko, Oleg Gluschenkov, Anupama Mallikarjunan |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces Combustion chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Secondary ion mass spectrometry X-ray reflectivity chemistry.chemical_compound Carbon film Silicon nitride chemistry Plasma-enhanced chemical vapor deposition Physical vapor deposition Thin film Composite material |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:517-521 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | Various methods of generating high stress in thin plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) films are reported. Besides the mainstream variation of plasma power and other process parameters, novel techniques such as creation of high density layers in multilayer PECVD structures or exposure of SiN films to ultraviolet radiation are shown to increase intrinsic film stress. Thin PECVD SiN films have been analyzed by a variety of analytical techniques including Fourier transform infrared spectroscopy, x-ray reflectivity (XRR), time of flight secondary ion mass spectrometry, and transmission electron microscopy to collect data on bonding, density, chemical composition, and film thickness. The level of bonded hydrogen as well as film density has been found to correlate with film stress. Creation of multilayer structures and high density layers help to build up more stress compared to a standard single layer film deposition. Both the density and number of layers in a film, character... |
| Databáze: | OpenAIRE |
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