| Autor: |
Minoru Naitoh, Sachiko Ishikita, Hiroyuki Miyashita, Toshiharu Nishimura, Naoya Hayashi, Masaaki Kurihara, M. Katoh, Kazuo Suwa, Norihiro Tarumoto, Tatsuya Tomita, Hiroyuki Nakamura, D. Tagaya |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Photomask and X-Ray Mask Technology. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.191937 |
| Popis: |
A half-tone phase shift mask process has been developed. The writing and process for normal masks are found to be applicable to HT-PSMs. A dry etch process has been adopted to etch the shifter. Several characteristics of HT-PSMs such as CD uniformity, CD linearity, edge roughness and corner rounding, positional accuracy in the EB process, selectivity in dry etch, pattern profile, durability against cleaning, pelliclization and a blind pattern are evaluated. The process shows a good performance sufficient for first generation 64 MDRAM mask making. The EB writing causes no charge-up problem. The selectivity of HT-shifter to an i-line resist and an new type EB resist in dry etch is satisfactory and the selectivity to a fused silica substrate is more than 300. An exposure test was conducted with our HT-PSM. Coherency factor ((sigma) ) of a stepper is found to strongly affect the defocus range and exposure latitude. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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