Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications
| Autor: | Robert William Ryan, Y.C. Wang, M. A. Melendes, R. Pullela, A. Tate, Y.K. Chen, R. A. Hamm, Rose Fasano Kopf, J. Thevin |
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| Rok vydání: | 2000 |
| Předmět: |
Plasma etching
Fabrication business.industry Chemistry Bipolar junction transistor Analytical chemistry Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Materials Chemistry Indium phosphide Optoelectronics Light emission Dry etching Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Journal of Electronic Materials. 29:222-224 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-000-0146-9 |
| Popis: | We have fabricated reduced area InGaAs/InP DHBTs for high speed circuit applications. To produce the small dimensions required, a process involving both wet chemical and ECR plasma etching was developed. Optical emission spectroscopy was used for end-point detection during plasma etching. With this improved process, an ft of 170 and fmax of 200 GHz were achieved for 1.2 × 3 µm2 emitter size devices with a 500 A base. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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