Quality improvement of high-performance transparent conductive Ti-doped GaZnO thin film
| Autor: | Shen-Yu Wu, Wei-Sheng Liu, Chao-Yu Hung, Ching-Hsuan Tseng |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Doping Metals and Alloys Surfaces and Interfaces Substrate (electronics) Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Materials Chemistry Transmittance Optoelectronics Figure of merit Thin film business Sheet resistance Transparent conducting film |
| Zdroj: | Thin Solid Films. 570:568-573 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2014.05.028 |
| Popis: | Ti-doped GaZnO transparent conductive oxide films were deposited at various substrate temperatures by radio-frequency magnetron sputtering to examine the effects of crystalline quality on thin-film optoelectronic properties. The results show a low resistivity of 2.97 × 10 −4 Ω-cm and a high optical transmittance of 94.15% (wavelength region of 400–800 nm) in 300-nm-thick Ti-doped GaZnO thin films grown at the substrate temperature of 300 °C, with a post-annealing temperature of 400 °C. To evaluate the performance of Ti-doped GaZnO transparent conductive oxide films, this study employed the figure of merit ( Φ TC ), expressed as Φ TC = T 10 /R S ( T : transmittance R S : sheet resistance), and calculated as 55.2 × 10 −3 Ω − 1 , which is suitable for high-performance optoelectronic device applications. |
| Databáze: | OpenAIRE |
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