Surface morphology of polycrystalline silicon films formed by chemical vapour deposition
| Autor: | H.A. Van der Linden, A.M. Beers, J. Bloem |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Surface (mathematics)
Materials science Morphology (linguistics) Atmospheric pressure Nucleation Analytical chemistry Chemical vapor deposition engineering.material Condensed Matter Physics Inorganic Chemistry Stress (mechanics) Crystallography Polycrystalline silicon Impurity Materials Chemistry engineering |
| Zdroj: | Journal of Crystal Growth. 65:411-414 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(83)90082-9 |
| Popis: | Polycrystalline silicon films were grown on Si 3 N 4 by CVD from a SiH 4 /H 2 ambient at 900°C and at atmospheric pressure. A two-stage nucleation process enabled SEM observation of isolated single crystals in addition to the more familiar dense poly layers. The direction of fast growth is 〈110〉 and the crystals are bounded by slow growing {111} and {100} faces. Novel surface features are reported that presumable arise from the action of stress and impurities during growth of these layers. |
| Databáze: | OpenAIRE |
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