Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition
| Autor: | Ray Li, Ryan Chang, Andrea Corrion, Yu Cao, Rongming Chu, Adam J. Williams |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Hybrid physical-chemical vapor deposition Mechanical Engineering chemistry.chemical_element Gallium nitride 02 engineering and technology Chemical vapor deposition Combustion chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences chemistry.chemical_compound chemistry Chemical engineering Mechanics of Materials Plasma-enhanced chemical vapor deposition 0103 physical sciences General Materials Science Thin film Gallium 0210 nano-technology |
| Zdroj: | Journal of Materials Research. 32:1611-1617 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.2017.126 |
| Popis: | To achieve the first demonstration of non-polar a-plane gallium nitride (GaN) epitaxy on (0 1 0) gallium oxide substrates by metal organic chemical vapor deposition (MOCVD), a low temperature AlGaN nucleation layer was engineered. Specific low temperature AlGaN growth parameters were necessary because the gallium oxide substrate begins to decompose at ∼600 °C in the ambient of H2. To achieve a smooth GaN epitaxial surface, low V/III molar ratio, and low pressure were required. To characterize the GaN film, AFM along with an orientation-dependent crystal tilt mosaic study by X-ray diffraction was performed. We effectively reduced threading dislocation density by applying in situ SiN interlayers grown by MOCVD. The oxygen contamination in the GaN film was found to originate from the substrate decomposition during GaN growth and can be reduced more than 10 times by using GaN buffer layer grown under N2 ambient. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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