Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes
| Autor: | Andrew Trentin, Patrick Wheeler, Chris Tighe, Mark Johnson, Li Yang, Marco Degano, David Hind, Matthew Packwood, Chris Gerada, Saul Lopez Arevalo, Anne Harris |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry 020209 energy 020208 electrical & electronic engineering Schottky diode 02 engineering and technology chemistry.chemical_compound chemistry Power module MOSFET 0202 electrical engineering electronic engineering information engineering Silicon carbide Optoelectronics Thermal simulation business |
| Zdroj: | 2018 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: | 10.1109/ecce.2018.8557415 |
| Popis: | The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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