| Autor: |
Mitsuru Imaizumi, Chiharu Morioka, Takuo Sasaki, Takeshi Ohshima, Ahmed Ghitas, Dalia Elfiky, Tarek Eldesuky, Masafumi Yamaguchi, Tatsuya Takamoto, Shin-ichiro Sato, Mohamed Elnawawy |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 35th IEEE Photovoltaic Specialists Conference. |
| DOI: |
10.1109/pvsc.2010.5614633 |
| Popis: |
Proton energy dependence of radiation damage to GaAs/Ge solar cells irradiated by protons with various energies (50 keV, 200 keV, 1 MeV and 9.5 MeV) were analyzed by using PC1D simulation together with SRIM simulations to investigate their electrical properties. The degradation of the open-circuit voltage is highest for 50 keV irradiation and lowest for 9.5 MeV irradiation. According to SRIM simulations the above changes in electrical properties are mainly related to damage in different regions of the solar cells. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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