Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy
| Autor: | David Arto Laleyan, Pallab Bhattacharya, Zetian Mi, Anthony Aiello, Aniruddha Bhattacharya, Ayush Pandey, Jiseok Gim, Xianhe Liu, Robert Hovden |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Scattering 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Dark field microscopy Molecular physics Inorganic Chemistry Condensed Matter::Materials Science 0103 physical sciences Scanning transmission electron microscopy Materials Chemistry 0210 nano-technology Ground state Quantum well Excitation Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 508:66-71 |
| ISSN: | 0022-0248 |
| Popis: | We have investigated the nature of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells grown by plasma-assisted molecular beam epitaxy for application in deep-ultraviolet light emitters. Excitation and temperature-dependent and time-resolved photoluminescence measurements and transmission and reflectance spectroscopy have been complemented by high-angle annular dark field scanning transmission electron microscopy. The 3 nm quantum wells are characterized by interface roughness having a height of 0.3–1 nm and the maximum value is in excellent agreement with values obtained from calculations done to analyze the measured photoluminescence lineshape. The radiative lifetime increases with temperature, suggesting the role of electron-hole scattering to cool photoexcited carriers to the ground state of the quantum wells. |
| Databáze: | OpenAIRE |
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