High-Performance InGaN p-i-n Photodetectors Using LED Structure and Surface Texturing
| Autor: | Chih-Wei Huang, Yen-Hsiang Huang, Cong Jun Lin, Yu Ting Chen, Wenchang Yeh, Yi-Ting Huang, Pinghui S. Yeh |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Photodetector chemistry.chemical_element Gallium nitride 02 engineering and technology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Indium tin oxide Wavelength chemistry.chemical_compound Responsivity 020210 optoelectronics & photonics Optics chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Indium Dark current Diode |
| Zdroj: | IEEE Photonics Technology Letters. 28:605-608 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2015.2500272 |
| Popis: | High-performance InGaN-based p-i-n photodetectors (PDs) were fabricated using a typical light-emitting diode (LED) epitaxial structure and surface texturing. A multiple-quantum-well active-layer structure effectively mitigates the indium clustering problem and achieves a high rejection ratio and scalability. Two types of surface texturing for enhancing spectral responsivity were fabricated and compared. High responsivities of 0.21, 0.23, and 0.24 A/W were attained at a wavelength of 388 nm and the biases of 0, −1.5, and −3.0 V, respectively, corresponding to external quantum efficiencies (EQEs) of 67%, 73%, and 78%. And the dark current was below 10 pA at zero bias. To the best of our knowledge, the responsivity reported in this letter is the highest for InGaN-based p-i-n PDs. Moreover, the sample with a surface-textured p-GaN layer has 50%–85% higher EQE at wavelengths between 335 and 365 nm and flatter spectral responsivity than did the other examined sample. High cost performance, low operating voltage, and LED-process-compatible PDs were obtained. |
| Databáze: | OpenAIRE |
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