| Autor: |
Kang-ill Seo, Jongwan Choi, Sang-pil Sim, Yangsoo Sohn, Seung-Hun Lee, Kwan-Heum Lee, Si-Young Choi, Chulgi Song, Kyungseok Oh, Junghyun Park, Choongryul Ryu, Tae-Ouk Kwon, Chilhee Chung, Hyun-Jung Lee, Sang Bom Kang, Hee-Kyung Jeon, Wookje Kim, Seok-Hoon Kim, Kwan-Yong Lim, Uihui Kwon, Hong-Sik Yoon, Chung Geun Koh, Jinyeong Cho, Eunha Lee |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2010.5703332 |
| Popis: |
High-k/metal gate (HKMG) compatible high performance Source/Drain (S/D) stress-memorization-technology (SMT) is presented. Channel stress generated by SMT can be simulated by using mask-edge dislocation model, which is consistent with the measured actual channel stress. Extremely deep pre-amorphization-implant (PAI) for SMT creates multiple mask-edge dislocations under S/D region, which enhances short-channel mobility by 40∼60%. Finally, more than 10% short channel drive current gain is achieved with additional S/D extension optimization. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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