Enabling UTBB Strained SOI Platform for Co-Integration of Logic and RF: Implant-Induced Strain Relaxation and Comb-Like Device Architecture
| Autor: | Eugene Y.-J. Kong, Walter Schwarzenbach, Anne Vandooren, Bich-Yen Nguyen, Olivier Weber, Chen Sun, Aaron Thean, Christophe Maleville, Xiao Gong, Haiwen Xu, V. Barral, R. Berthelon, Franck Arnaud, Jie Liang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Annealing (metallurgy) chemistry.chemical_element Silicon on insulator Germanium Tensile strain 01 natural sciences Silicon-germanium chemistry.chemical_compound chemistry 0103 physical sciences Electrical performance Optoelectronics Radio frequency business |
| Zdroj: | 2020 IEEE Symposium on VLSI Technology. |
| Popis: | For the first time, ion implant was used to partially relax the tensile strain by half in the fully-depleted (FD) strained SOI (SSOl) so that SiGe pFETs with a higher compressive strain can be realized at a fixed Ge composition. This enables the co-integration of highly tensile-strained Si nFETs and compressive-strained SiGe pFETs on the same substrate, achieving significant improvement in electrical performance over the unstrained counterpart verified by both experiment and simulation results. We also propose a Comb-like strained SOI architecture to further boost RF performance, demonstrating peak $G_{\mathrm{m}}$ improved by 47% over unstrained n-type FinFET SOI, as well as an improvement of 22% and 36% for $f_{\mathrm{T}}$ and $f_{\max}$ , respectively, over n-type FinFETs SSOI. |
| Databáze: | OpenAIRE |
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