Multi-finger power SiGe HBTs for thermal stability enhancement over a wide biasing range
| Autor: | Gan Jun-ning, Shen Pei, Zhang Wan-rong, Wang Yang, Zhang Wei, Li Jia, Xie Hong-Yun, Jin Dongyue, He Li-jian, Sha Yong-ping |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering Heterojunction Biasing Condensed Matter Physics Electronic Optical and Magnetic Materials Power (physics) law.invention law Materials Chemistry Optoelectronics Thermal stability Electrical and Electronic Engineering Resistor business Common emitter |
| Zdroj: | Solid-State Electronics. 52:937-940 |
| ISSN: | 0038-1101 |
| Popis: | Multi-finger power SiGe heterojunction bipolar transistors (HBTs) with emitter ballasting resistor and non-uniform finger spacing are fabricated, and temperature profiles of them are measured. Experimental results show that both of them could improve the temperature profile compared with an HBT which has uniform finger spacing. For the HBT with emitter ballasting resistor, the ability to lower the peak temperature is weakened as power increases. However, for the HBT with non-uniform finger spacing, the ability to improve temperature profile is kept over a wide biasing range. Therefore, the experimental results directly prove that the technique of non-uniform finger spacing is a better method for enhancing the thermal stability of power HBTs over a wide biasing range. |
| Databáze: | OpenAIRE |
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