Laser-induced anisotropic absorbtion, reflection, and scattering of light in chalcogenide glassy semiconductors
| Autor: | M. L. Klebanov, V. M. Lyubin |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Chalcogenide Dichroism Photon energy Condensed Matter Physics Laser Molecular physics Atomic and Molecular Physics and Optics Light scattering Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science chemistry.chemical_compound Reflection (mathematics) Semiconductor chemistry law Condensed Matter::Superconductivity Optoelectronics business Anisotropy |
| Zdroj: | Semiconductors. 32:817-823 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187513 |
| Popis: | Anisotropy induced in thin-film and bulk samples of chalcogenide glassy semiconductors by the linearly polarized light of different spectral ranges is studied. Three different ranges of exciting photon energy can be distinguished. 1) Above-band-gap light excitation is studied in film samples, two distinct processes are identified in this range: creation of photoinduced defects and their photostimulated orientation and reorientation; a “defect-based” model of photoinduced anisotropy is further developed. 2) Subband-gap light excitation is studied in bulk samples; creation of anisotropically scattered centers is assumed to be the basis of all photoinduced vector phenomena in that spectral range. 3) Superband-gap light excitation is studied in film and bulk samples because the application of differential reflectance spectroscopy; it was shown that not only defects but also main covalent bonds of the glass can be oriented and reoriented by the linearly polarized light that generates the photoinduced dichroism in this spectral interval. |
| Databáze: | OpenAIRE |
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