Blue-Violet Inner Stripe Laser Diodes Using Lattice Matched AlInN as Current Confinement Layer for High Power Operation

Autor:	Wei-Sin Tan, Valerie Bousquet, Koji Takahashi, Masataka Ohta, Yuhzoh Tsuda, Matthias Kauer, Akira Ariyoshi
Rok vydání:	2009
Předmět:	Materials science Threshold current Laser diode business.industry Slope efficiency General Engineering Physics::Optics General Physics and Astronomy Chemical vapor deposition Laser law.invention Optics law Lattice (order) Optoelectronics Metalorganic vapour phase epitaxy business Diode
Zdroj:	Applied Physics Express. 2:112101
ISSN:	1882-0786 1882-0778
DOI:	10.1143/apex.2.112101
Popis:	We report on a novel method using lattice matched AlInN as the current confinement layer for inner stripe laser diodes. Optimisation of the sample preparation techniques and metal organic chemical vapor deposition (MOCVD) regrowth conditions resulted in an inner stripe laser diode with threshold current density of ~3.3–3.5 kA/cm2 and slope efficiency of 1.6 W/A. The cw lifetime and other characteristics of the inner stripe laser diode are discussed. Simulation data have also shown that this structure is beneficial for reducing operating voltage when compared to a conventional ridge waveguide structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::02c939574831093f5cae0a6d79c5b158 https://doi.org/10.1143/apex.2.112101 Zobrazit plný text záznamu