1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C

Autor:	Martin Mohrle, W. Passenberg, Wolfgang Rehbein, D. Fendler, N. Grote, M. Spiegelberg
Rok vydání:	2013
Předmět:	Optical amplifier Distributed feedback laser Optics Materials science business.industry Optoelectronics Laser power scaling Optical modulation amplitude Injection seeder business Q-switching Tunable laser Semiconductor laser theory
Zdroj:	2013 International Conference on Indium Phosphide and Related Materials (IPRM).
DOI:	10.1109/iciprm.2013.6562617
Popis:	1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::029f074b4e08a07d3b5365732eb8c132 https://doi.org/10.1109/iciprm.2013.6562617 Zobrazit plný text záznamu