Study of ion mixing during Auger electron spectroscopy depth profiling of Ge–Si multilayer system

Autor:	Arpad Barna, Miklós Menyhárd, J. P. Biersack
Rok vydání:	1994
Předmět:	Auger electron spectroscopy Materials science Silicon Resolution (electron density) Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces Condensed Matter Physics Molecular physics Trim Surfaces Coatings and Films chemistry Sputtering Image resolution Mixing (physics)
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2368-2372
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.579216
Popis:	Auger electron spectroscopy depth profiling was carried out on a Ge–Si multilayer structure using a rotated specimen and grazing incidence angle. Under these sputtering conditions the depth resolution is determined mainly by atomic mixing. The dependence of the experimentally measured depth resolution on incidence angle and energy was compared with the simulation results from a trim code. It was found that the trends of the dependencies were the same, but the trim absolute values were different.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0299b08200a2ef6ce88ae5fd044d5bfe https://doi.org/10.1116/1.579216 Zobrazit plný text záznamu