Enhanced silicon single-photon avalanche diode based on light trapping

Autor:	Theodore I. Kamins, Muyu Xue, Yueyang Fei, Yijie Huo, Kai Zang, Qiang Zhang, Xun Ding, Ching-Ying Lu, Matthew Morea, Tianzhe Zheng, James S. Harris, Jian-Wei Pan, Xiao Jiang
Rok vydání:	2018
Předmět:	Photomultiplier Materials science Silicon business.industry chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 020210 optoelectronics & photonics Silicon photomultiplier Single-photon avalanche diode chemistry Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics Photonics Image sensor business Absorption (electromagnetic radiation) Jitter
Zdroj:	Conference on Lasers and Electro-Optics.
DOI:	10.1364/cleo_si.2018.stu3a.3
Popis:	We present a nano-structured light-trapping Si SPAD with improved detection efficiency, without sacrificing jitter distribution or dark count rate. The design can be adopted for CMOS-compatible SPAD image sensors and silicon photomultipliers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::028d4e83d28b4644730fd9203941d9f2 https://doi.org/10.1364/cleo_si.2018.stu3a.3 Zobrazit plný text záznamu