| Autor: |
Peter M. Kopalidis, Zhimin Wan, Erik Collart, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| DOI: |
10.1063/1.3548414 |
| Popis: |
Low energy implant process data are presented from a dual mode high current ion implanter. The iPulsar is a flexible single wafer implanter capable of running both ribbon beams with one‐dimensional mechanical scan of the wafer and spot beams with two‐dimensional wafer scan. The main components of the implanter are described and their operation explained. Boron concentration profiles in Ge pre‐amorphized substrates, measured by secondary ion mass spectroscopy (SIMS) are presented before and after anneal with drift and decelerated beams. In addition, spot and ribbon beam as‐implanted phosphorus and carbon profiles are presented and the characteristics of each mode of operation are discussed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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