| Popis: |
The expansion of numerous novel electronic devices is precisely related to the obtainability of materials in single-crystalline format, with fewer densities of crystallographic defect and exclusive magnetic, chemical, electrical, optical, and mechanical properties. These excellent single crystals can be applied whether like substrates for the epitaxial growth of sophisticated multilayer structures or straight for the device industry. This article analyzes the theory of the crystal growth techniques and methods for the preparation of SiC bulk crystals are discussed as well. Defects occurred in SiC crystalsis and mechanisms of their structures are presented. |
