Nucleation of Space-Charge Waves in an Extrinsic Semiconductor with Nonuniform Impurity Profile

Autor:	Stephen W. Teitsworth, Michael J. Bergmann, Luis L. Bonilla
Rok vydání:	1996
Předmět:	Materials science Condensed matter physics business.industry Contact resistance Nucleation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Acceptor Semiconductor Impurity Electronic engineering business Space charge waves Voltage Extrinsic semiconductor
Zdroj:	Hot Carriers in Semiconductors ISBN: 9781461380351
DOI:	10.1007/978-1-4613-0401-2_115
Popis:	Moving space charge waves are observed experimentally in ultrapure bulk p-type Ge under voltage bias.1 In many models of bulk semiconductor systems, it is assumed that the impurity profile is spatially uniform.2 We investigate here the effect that a small notch variation in the impurity profile (e.g., see Figure 1) has on the transition from stationary to periodic behavior in a model of closely-compensated p-type Ge under voltage bias. Closely-compensated samples have a compensation ratio a (ratio of acceptor concentration to donor concentration) ~1.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0277064263eba1c91f7cf0ff749c5cc5 https://doi.org/10.1007/978-1-4613-0401-2_115 Zobrazit plný text záznamu