Two‐dimensional electron gas magnetic field sensors

Autor:	Dale L. Partin, Donald T. Morelli, C. M. Thrush, Joseph P. Heremans, Brian K. Fuller
Rok vydání:	1990
Předmět:	Condensed Matter::Materials Science Electron mobility Physics and Astronomy (miscellaneous) Magnetoresistance Condensed matter physics Chemistry Hall effect Heterojunction Electron Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electric charge Magnetic field
Zdroj:	Applied Physics Letters. 57:291-293
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.103717
Popis:	We describe the use of accumulation layers of electron charge in applications as magnetoresistive devices. We consider two such systems: an InGaAs/InP heterostructure in which we identify a two‐dimensional electron gas from the observation of the quantum Hall effect, and InAs films, in which a strong surface accumulation of charge is inferred from depth profiling studies of the galvanomagnetic coefficients. Magnetoresistive devices fabricated from these materials exhibit outstanding field sensitivity and temperature stability due to the existence of electrons of relatively high density and mobility in the accumulation regions. We also model the magnetosensitivity of our devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::026a05fd0800aedec00b4a3fc543d45d https://doi.org/10.1063/1.103717 Zobrazit plný text záznamu