Si/SiO2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering

Autor:	H. M. van Driel, Wayne H. Knox, Frieder H. Baumann, Steven T. Cundiff, K. W. Evans-Lutterodt, Mau‐Tsu Tang, Martin L. Green
Rok vydání:	1997
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Scattering X-ray chemistry.chemical_element Surface finish Power (physics) Optics Signal-to-noise ratio chemistry X-ray crystallography Surface second harmonic generation business
Zdroj:	Applied Physics Letters. 70:1414-1416
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.118592
Popis:	The roughness of the Si(100)/SiO2 interface is measured using both surface second harmonic generation (SSHG) and x-ray scattering. A comparison between these techniques shows a clear correlation for typical industrial oxides, despite the techniques being sensitive to differing regions of the roughness spectrum. The SSHG measurements are made using ∼10 fs pulses centered at 850 nm and at 80 MHz repetition rate. The short pulses produce a similar signal to noise ratio as earlier measurements, but use much lower average power, thus avoiding possible artifacts such as sample heating.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::025e61d0293fb06ef32e4bebbfd97366 https://doi.org/10.1063/1.118592 Zobrazit plný text záznamu