Atmospheric Pressure Radio-Frequency DBD Deposition of Dense Silicon Dioxide Thin Film
| Autor: | Jean-François Lelièvre, Françoise Massines, Remy Bazinette, J. Paillol |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Polymers and Plastics Atmospheric pressure Silicon dioxide Analytical chemistry Dielectric barrier discharge Condensed Matter Physics 01 natural sciences Silane Dissociation (chemistry) 010305 fluids & plasmas chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition 0103 physical sciences Thin film Silicon oxide |
| Zdroj: | Plasma Processes and Polymers. 13:1015-1024 |
| ISSN: | 1612-8850 |
| DOI: | 10.1002/ppap.201600038 |
| Popis: | Radio-frequency (RF) homogeneous dielectric barrier discharge (DBD) is compared to low frequency glow DBD to make silicon oxide from Ar/NH3/SiH4. RF-DBD is a more powerful discharge, and the growth rate is not limited by precursor dissociation rate but by powder formation. Powders are not deposited in the plasma zone but in the post-discharge due to their trapping by the electric field. Modulation of the RF-DBD is a useful solution to avoid powder formation. Powders are systematically avoided if the plasma energy during time on stays below 750 µJ. RF-DBD modulation also increases the growth rate twofold compare to continuous RF. The optimum growth rate without powder corresponds to a short Ton to limit precursor dissociation, a long Toff to enhance diffusion and a fast repeat frequency to increase deposition rate. |
| Databáze: | OpenAIRE |
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