Single-crystal Si formed on amorphous substrate at low temperature by nanopatterning and nickel-induced lateral crystallization
| Autor: | Nan Yao, Jian Gu, Jeffrey K. Farrer, Stephen Y. Chou, Henny W. Zandbergen |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
inorganic chemicals
Amorphous silicon Materials science Physics and Astronomy (miscellaneous) Silicon business.industry technology industry and agriculture Nanocrystalline silicon chemistry.chemical_element Substrate (electronics) Epitaxy Amorphous solid law.invention chemistry.chemical_compound Crystallography chemistry law Optoelectronics Crystallization business Single crystal |
| Zdroj: | Applied Physics Letters. 81:1104-1106 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Single-crystal silicon has been achieved by patterning amorphous silicon film on silicon dioxide substrate into nanoscale lines and nickel-induced lateral crystallization. Line width affects the single-crystal silicon formation significantly. Narrow line widths, 30 nm or less, resulted in little lateral crystallization; while for line widths above 250 nm, multiple grains started to form. In-situ transmission electron microscope observation has been used to study the crystallization process. Lithography-constrained single seeding is proposed to explain the single-crystal formation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|