Using Auger Electron Spectroscopy for Chemical Analysis of Plasma Damage Induced by Reactive Ion Etching of SiO2

Autor:	Fumihiko Uchida, Takafumi Tokunaga, Masayuki Kojima, Miyako Matsui, Kiyomi Katsuyama
Rok vydání:	1998
Předmět:	Auger electron spectroscopy Materials science X-ray photoelectron spectroscopy General Engineering Analytical chemistry General Physics and Astronomy Wafer Plasma Dry etching Reactive-ion etching Layer (electronics) Spectral line
Zdroj:	Japanese Journal of Applied Physics. 37:6199
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.37.6199
Popis:	Surface damage induced by reactive ion etching (RIE) at the bottom of the pattern was investigated in terms of chemical information by Auger electron spectroscopy (AES). The Si-L23VV line shape was changed during the removal of the damage by chemical dry etching after RIE. The relationship between the changing of the Si-L23VV line shape and the chemically damaged layer, which contains SiO x and SiC, was investigated by X-ray photoelectron spectroscopy (XPS) and AES for nonpatterned wafers. The height of the peaks at 90 eV and 79 eV in the Si-L23VV spectra were correlated with the amounts of chemical damage in the layer measured by XPS. The thickness of the residual SiO x damage was estimated from the relationship between the Si-L23VV line shape and the thickness of the SiO x layer. This relationship was applied to the chemical analysis for patterned wafers. The line shape of the Si-L23VV spectrum from the bottom of the pattern was also changed as the chemical-dry-etching time increased.
Databáze:	OpenAIRE
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