Observation of voltage contrast in scanning ion microscopy of integrated circuits

Autor:	J. R. A. Cleaver, E. C. G. Kirk, Haroon Ahmed
Rok vydání:	1987
Předmět:	Very-large-scale integration Materials science Ion beam business.industry media_common.quotation_subject Integrated circuit law.invention Optics law Contrast (vision) Electric potential Electrical and Electronic Engineering Electron microscope business Field ion microscope media_common Voltage
Zdroj:	Electronics Letters. 23:585-586
ISSN:	1350-911X
DOI:	10.1049/el:19870420
Popis:	Strong voltage contrast effects have been observed in scanning ion microscopy of integrated circuits. The ion beam has also been used to cut microsections in integrated circuits, with precise control of position and depth. The voltage distributions in these sections can be observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::021dab03e746a819b5bc2d5a48ce54c8 https://doi.org/10.1049/el:19870420 Zobrazit plný text záznamu