A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs

Autor:	S. Subramanian, T.K. Plant, D. Schulte, J.R. Arthur, L. Ungler
Rok vydání:	2002
Předmět:	Materials science business.industry Doping Photodetector Gallium arsenide Responsivity chemistry.chemical_compound chemistry Modulation Optoelectronics Field-effect transistor business Sensitivity (electronics) Diode
Zdroj:	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
DOI:	10.1109/cornel.1995.482438
Popis:	A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of /spl sim/95 A/W in the MODFET mode which is /spl sim/6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::021abcdad8dd233c5a9adef61e4ba1aa https://doi.org/10.1109/cornel.1995.482438 Zobrazit plný text záznamu