Measurement of minority carrier lifetime in silicon by high speed terahertz detector

Autor:	田 震 Tian Zhen, 陈勰宇 Chen Xieyu, 张 钊 Zhang Zhao
Rok vydání:	2019
Předmět:	Materials science Silicon chemistry Space and Planetary Science business.industry Aerospace Engineering Optoelectronics Terahertz detector chemistry.chemical_element Carrier lifetime Electrical and Electronic Engineering business Atomic and Molecular Physics and Optics
Zdroj:	Infrared and Laser Engineering. 48:919003
ISSN:	1007-2276
DOI:	10.3788/irla201948.0919003
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0212a673795675cf69f9ab9be55137d6 https://doi.org/10.3788/irla201948.0919003 Zobrazit plný text záznamu