| Autor: |
Sang-In Lee, Jong-Myeong Lee, Gil Heyun Choi, Young Wook Park, Sang Bom Kang, Byung Hee Kim, Yun Sook Chae |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361). |
| Popis: |
The barrier properties and the reliability of Al to Si contacts using different types of TiN in the Al-PMD process are investigated. The Al-PMD process is shown to be an excellent metallization technique for high density devices such as Giga-bit DRAMs and beyond when ACVD-TiN is used as a barrier layer. ACVD-TiN has the best diffusion barrier properties due to its high density and good conformality. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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