High‐speed photoresponse in a reverse biased InGaAs/InP laser structure at 1.54 μm: Experiment and modeling

Autor:	A. Delâge, B. Takasaki, Michael Davies, Z.-M. Li, Sylvain Charbonneau, Dolf Landheer, G. C. Aers, K. A. McGreer, D. Conn, M. Dion, David J. Moss
Rok vydání:	1993
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Photodetector Photodetection Cladding (fiber optics) Laser Particle detector Semiconductor laser theory law.invention Optics law Optoelectronics Quantum efficiency business Quantum well
Zdroj:	Applied Physics Letters. 63:12-14
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109733
Popis:	We report extremely efficient (∼100% internal quantum efficiency) and high‐speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge‐waveguide multiple quantum well p‐i‐n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0202573ddf51a4b93a8a4ea839328f58 https://doi.org/10.1063/1.109733 Zobrazit plný text záznamu