| Autor: |
R. Devenuto, V. DiMilia, D. Crockatt, D. Katcoff, J. P. Silverman, John Michael Warlaumont, K. Kwietniak, L. K. Wang, L. C. Hsia, A. D. Wilson, B. Hill, David E. Seeger, Robert P. Rippstein |
| Rok vydání: |
1988 |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:2147 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.584104 |
| Popis: |
Functional, fully scaled n‐type metal–oxide semiconductor (NMOS) circuits with 0.5‐μm ground rules have been fabricated using synchrotron radiation x‐ray lithography for all device levels. The exposures were done at the vacuum ultraviolet storage ring of the National Synchrotron Light Source at Brookhaven National Laboratory using a mask/wafer aligner developed at IBM Research. The system is capable of step‐and‐repeat exposures covering 125‐mm wafers. The mask and wafer are held in a near‐vertical plane and a scanning dark‐field alignment technique is used to register mask to wafer with a proximity gap of 40 μm. A scanning mirror in the beamline sweeps the x‐ray beam up and down over the exposure area to achieve uniform exposure over the 25×25 mm2 exposure field used for this experiment. Exposures were done in 20 Torr of helium to provide cooling for the mask. Both positive and negative tone single‐layer resists were used. The mask set consists of four light‐field masks patterned on silicon substrates wit... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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