A Silicon Based 4.5-GHz Near-field Capacitive Sensing Imaging Array
| Autor: | James C. M. Hwang, Christopher Chen, R. Al Hadi, Mehmet Kaynak, Xuanhong Cheng, M.-C.F. Chang, Weikang Qiao, Jia Zhou, Yan Zhao |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Capacitive sensing 020208 electrical & electronic engineering Near and far field Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Dielectric Inductor Capacitance law.invention Capacitor Sensor array Intermediate frequency Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics business |
| Zdroj: | 2019 IEEE MTT-S International Microwave Symposium (IMS). |
| Popis: | This paper presents a two-dimensional capacitive sensor array implemented in a 0.13-µm silicon technology for material characterization. The circuit is based on an oscillator operating at 4.5 GHz with a single inductor and a distributed capacitor. The 6×6 sensor array can be individually selected. When a dielectric material is in the near field of a pixel, it results in a shift of the oscillator frequency. A mixer is used to down-convert the the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data. The array is capable of detecting capacitance shift with a sensitivity down to 1.25 aF and a spatial resolution of 6 µm. |
| Databáze: | OpenAIRE |
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