Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes

Autor:	M.I. Heggie, Th. Frauenheim, Rafael Gutierrez, M. Haugk, R. Jones, J. Elsner, Sven Öberg, Patrick R. Briddon
Rok vydání:	1998
Předmět:	Materials science Physics and Astronomy (miscellaneous) chemistry Chemical physics Diffusion Vacancy defect Nanostructured materials Wide-bandgap semiconductor chemistry.chemical_element Surface structure Oxygen impurity Gallium Oxygen
Zdroj:	Applied Physics Letters. 73:3530-3532
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.122826
Popis:	Local density–functional methods are used to examine the behavior of O and O-related defect complexes on the walls of nanopipes in GaN. We find that O has a tendency to segregate to the (1010) surface and identify the gallium vacancy surrounded by three oxygen impurities [VGa–(ON)3] to be a particularly stable and electrically inert complex. We suggest that during Stranski–Krastanow growth, when interisland spaces shrink, these defects reach a critical concentration beyond which further growth is prevented and nanopipes are formed.
Databáze:	OpenAIRE
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