Epitaxial growth of ZnMgTe and double heterostructure of on GaAs substrate by metalorganic chemical vapor deposition

Autor:	Fumihiko Nakamura, Akira Ishibashi, Kenji Funato, Takeharu Asano
Rok vydání:	1995
Předmět:	Photoluminescence Chemistry Band gap Inorganic chemistry Analytical chemistry Heterojunction Chemical vapor deposition Double heterostructure Condensed Matter Physics Epitaxy Inorganic Chemistry Materials Chemistry Metalorganic vapour phase epitaxy Thin film
Zdroj:	Journal of Crystal Growth. 156:373-376
ISSN:	0022-0248
Popis:	We have epitaxially grown ZnMgTe ternary alloys, whose Mg content is between 0% and 50%, on (100) GaAs substrates by metalorganic chemical vapor deposition. The band-gap energy estimated from the emission wavelength at room temperature can be varied from 2.26 to 2.57 eV. In the photoluminescence (PL) measurements at 4.2 K, band-edge emission was clearly observed up to Mg content of 25%. The refractive index decreases as Mg content increases. In the PL spectra of double heterostructures of ZnTe ZnMgTe at 4.2 K, strong emission and quantum size effect were observed. These results suggest that effective carrier and optical confinement are possible.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::01ed75cc7ef82b1c4be77c93c19482e4 https://doi.org/10.1016/0022-0248(95)00244-8 Zobrazit plný text záznamu Full Text from ScienceDirect