A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission
| Autor: | M. Babar Shahzad, Lin Qi, Yang Qi, Zhaoyuan Chai, Huazhe Yang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science Dopant business.industry Band gap Mechanical Engineering Metals and Alloys 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Nanomaterials X-ray photoelectron spectroscopy Mechanics of Materials Materials Chemistry Optoelectronics Light emission Homojunction 0210 nano-technology business Deposition (law) |
| Zdroj: | Journal of Alloys and Compounds. 793:295-301 |
| ISSN: | 0925-8388 |
| Popis: | A novel fabrication of non-polar Sb-doped ZnO homojunction was realized via a facile and reproducible low-temperature aqueous solution deposition in the presence of Sb dopant dissolved in ethylene glycol (EG). The undoped non-polar ZnO films were introduced as the non-polar substrates for the non-polar growth of Sb-doped ZnO film as well as the SZO/ZnO homojunction. The parameters including the reaction time and dopant concentration for the synthesis of non-polar SZO/ZnO homojunction were identified. The existence and distribution of Sb dopant in SZO layer were confirmed by X-ray photoelectron spectroscopy (XPS) and elemental mapping analysis. The I–V measurement result indicated the p-type conduction of SZO layer and the synthesized p-SZO/n-ZnO homojunction with non-polar preferred orientations possessed both ultra-low turn-on voltage (1.5 V) and large rectification rate (>105). The excitation of orange-red light emissions from deep-level energy band gap demonstrated the (SbZn-xVZn) complex defect pattern. This novel non-polar SZO/ZnO homojunction could be an excellent candidate for the applications of one-dimensional ZnO nanomaterials in the electronic/photoelectronic field. |
| Databáze: | OpenAIRE |
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