Low-noise properties of dry gate recess etched InP HEMTs
| Autor: | B.-H.H. Klepser, H.C. Duran, Werner Bächtold |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Integrated circuit High-electron-mobility transistor Signal Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Dry etching Electrical and Electronic Engineering business Noise (radio) |
| Zdroj: | IEEE Electron Device Letters. 17:482-484 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.537082 |
| Popis: | Lattice-matched InAlAs-InGaAs HEMTs with dry etched and wet etched gate recesses have been fabricated and both high-frequency and noise measurements have been carried out. The highly selective dry etching process ensures uniform device parameters. The small signal and noise performance shows only minor differences between the two transistor types. There is no evidence of detrimental effects caused by dry etching that reduce the electrical and noise performance of the device at high frequencies. These results show that dry etched InP HEMT's have suitable characteristics for the fabrication of MM-wave integrated circuits. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|