Picosecond carrier dynamics near the gallium arsenide surface
| Autor: | S. M. Beck, J.G. Rollins, D. C. Marvin, J. E. Wessel |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Electron mobility
Materials science Ambipolar diffusion business.industry Doping Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Gallium arsenide chemistry.chemical_compound Optics Band bending chemistry Electric field Picosecond Electrical and Electronic Engineering business Electronic band structure |
| Zdroj: | IEEE Journal of Quantum Electronics. 25:1064-1071 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.28001 |
| Popis: | Analytical models for ambipolar diffusion and recombination successfully describe picosecond reflectivity signals for flat n-type GaAs, providing quantitative evaluation of surface recombination velocities. The simple models fail to describe the signals observed in the presence of band bending for typical pinned GaAs. Results of numerical modeling calculations developed in order to describe experiments characterized by band bending due to surface electric fields are reported. The results provide an excellent description of carrier dynamics for |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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