Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors
| Autor: | M. O. Hrapov, Victor A. Gridchin, A. V. Gluhov, Sergey V. Kalinin |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Transistor Bipolar junction transistor 02 engineering and technology Amplification factor Condensed Matter Physics 01 natural sciences Complementary pair Electronic Optical and Magnetic Materials law.invention Thermodynamic model law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Materials Chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering Current (fluid) business Voltage |
| Zdroj: | Russian Microelectronics. 47:472-478 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739718070053 |
| Popis: | The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model in analyzing high-power transistors due to the fact that this model takes into account the self-heating effect is demonstrated;. The simulation results are compared with the experimental characteristics of the test structures. The comparison shows that, for the current amplification factor β and the Early voltage VA, the computational error is less than 15%; for the critical parameter, the collector–emitter breakdown voltage VCE0, it is less than 2%, which is sufficient to use the thermodynamic model for practical purposes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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