| Autor: |
Anil B. Lingambudi, Janani Swaminathan, Trinadhachari Kosuru, Krishna Thangaraj, Gary A. Tressler, Steve Wilson, Tom Kroetsch, Navya Chaitanya Gogula, Preetham Raghavendra |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS). |
| DOI: |
10.1109/edaps50281.2020.9312911 |
| Popis: |
Spin Torque Transfer Magneto-resistive Random-Access Memory (STT-MRAM) is a type of non-volatile memory that stores data in magnetic domains. It is a very interesting market space that STT-MRAM will support, trying to take the best of both worlds, the ever fast paced DRAM with scaling challenges and the non-volatile world of Flash with latency challenges. Initial setup, bring-up and endurance characterization of the STT-MRAM device are summarized. An overview of the tester-board design, along with the endurance characterization methodology and test results are discussed. Learning shared to introduce and educate about STT-MRAM bring-up and help future system designs using STT-MRAM. STT-MRAM is not as scalable as DRAM or Flash but has high potential based on its performance and persistence characteristics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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