Relative Study of Analog Performance, Linearity, and Harmonic Distortion Between Junctionless and Conventional SOI FinFETs at Elevated Temperatures
| Autor: | Abhijit Mallik, Avik Chattopadhyay, Emona Datta |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Total harmonic distortion Materials science Solid-state physics business.industry Transconductance Transistor Silicon on insulator Linearity 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Electronic Materials. 49:3309-3316 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-020-08024-x |
| Popis: | This paper reports a comparative study of the analog performance, linearity and harmonic distortion characteristics between junctionless (JL) and conventional silicon-on-insulator (SOI) fin-type field-effect transistors (FinFETs) at elevated temperatures (300–500 K). A numerical device simulator is used for this study. Analog performance parameters of a JL FinFET are found to be less sensitive to variation in temperature as compared with its IM counterpart. Linearity is also found to be better for JL devices than IM devices for the entire temperature range. Moreover, harmonic distortion is found to be less for JL devices than IM devices. |
| Databáze: | OpenAIRE |
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