Investigation of Supercritical Fluid Treatment for SiN/SiON/AlGaN/GaN MIS-HEMTs

Autor:	Xinnan Lin, Shuhao Xiong
Rok vydání:	2020
Předmět:	Materials science business.industry Orders of magnitude (temperature) Transconductance Energy spectrum Optoelectronics Algan gan Dielectric business Drain current Supercritical fluid Threshold voltage
Zdroj:	2020 IEEE 3rd International Conference on Electronics Technology (ICET).
DOI:	10.1109/icet49382.2020.9119650
Popis:	Supercritical fluid treatment technology is introduced to MIS-HEMTs with Si-N related dielectric layers. The high resolution micrographs as well as energy spectrum distribution are analyzed before and after the supercritical fluid treatment. The technology effectively passivates the dielectric/III-V interfaces and improve the quality of the dielectrics. A molecular-level reaction mode was proposed to explain the positive shift of threshold voltage of ~2.5V as well as the increased maximum drain current by ~25%, increased maximum transconductance by ~34% and reduced off-state drain current by orders of magnitude. All the results reveal the potential of supercritical fluid treatment to be applied to GaN-based power switching applications as batching processing in low temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::01bdf0a4c7b6595c27718ff1a2bfea0a https://doi.org/10.1109/icet49382.2020.9119650 Zobrazit plný text záznamu