WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

Autor:	Yu-Te Chen, Ting-Chang Chang, Ming-Yen Tsai, Te-Chih Chen, Tien-Yu Hsieh
Rok vydání:	2013
Předmět:	Materials science business.industry Metals and Alloys Charge (physics) Surfaces and Interfaces Trapping Bias stress Surfaces Coatings and Films Electronic Optical and Magnetic Materials Thin-film transistor Materials Chemistry Degradation (geology) Optoelectronics business
Zdroj:	Thin Solid Films. 528:53-56
ISSN:	0040-6090
DOI:	10.1016/j.tsf.2012.09.093
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::01b29ffeeb056d185f5bd853cf9219c4 https://doi.org/10.1016/j.tsf.2012.09.093 Zobrazit plný text záznamu Full Text from ScienceDirect