Alternate Gate Oxides for Silicon Mosfets Using High-k Dielectrics

Autor:	K. J. Hubbard, P. H. Tan, Darrell G. Schlom, C.A. Billman
Rok vydání:	1999
Předmět:	Materials science Silicon chemistry Chemical physics Gate oxide Gate dielectric chemistry.chemical_element Ionic bonding Time-dependent gate oxide breakdown Dielectric Nitride High-κ dielectric
Zdroj:	MRS Proceedings. 567
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-567-409
Popis:	High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitrides in contact with silicon at 1000 K. Using the Clausius-Mossotti equation and ionic polarizabilities, the K of all known inorganic compounds composed of Si-compatible binary oxides was estimated. A ranked list of alternate gate oxide candidates that are likely to possess both high K and silicon-compatibility is given.
Databáze:	OpenAIRE
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