Laser spectroscopy of epitaxial manganese and zinc fluoride films on silicon

Autor: A. K. Kaveev, K.R. Hoffman, S. V. Gastev, Roger J. Reeves, N. S. Sokolov
Rok vydání: 2004
Předmět:
Zdroj: Journal of Crystal Growth. 268:536-542
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2004.04.087
Popis: Laser spectroscopy technique has been applied for studies of MnF 2 and ZnF 2 layers grown by molecular beam epitaxy on silicon substrates with the use of CaF 2 buffer layer. The films were doped during the growth with samarium either from SmF 3 molecular or Sm atomic beams. The excitation wavelength was scanned in the region of 6 H 5/2 → 4 G 5/2 transitions of Sm 3+ as well as near the absorption edge of the Mn 2+ 3d excitons of the tetragonal and orthorhombic phases of MnF 2 . The observed emission lines have been assigned to two types of (Sm 3+ –F − ) centers in the orthorhombic phase and one in the tetragonal rutile phase of MnF 2 . Efficient energy transfer from the host lattice to Sm 3+ centers was observed during excitation into the lowest Mn 2+ absorption band. Similar centers were also found in ZnF 2 epitaxial films, where along with (Sm 3+ –F − ) pair centers, an isolated Sm 3+ center with remote charge compensation was observed. Thus it was shown that Sm 3+ ions can be used as efficient luminescent probe for characterization of crystal phase composition in the films as well as the local environment of the dopants.
Databáze: OpenAIRE