Laser spectroscopy of epitaxial manganese and zinc fluoride films on silicon
Autor: | A. K. Kaveev, K.R. Hoffman, S. V. Gastev, Roger J. Reeves, N. S. Sokolov |
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Rok vydání: | 2004 |
Předmět: |
Photoluminescence
Chemistry Doping Inorganic chemistry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Inorganic Chemistry Samarium Zinc fluoride chemistry.chemical_compound Tetragonal crystal system Absorption edge Materials Chemistry Orthorhombic crystal system Spectroscopy |
Zdroj: | Journal of Crystal Growth. 268:536-542 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2004.04.087 |
Popis: | Laser spectroscopy technique has been applied for studies of MnF 2 and ZnF 2 layers grown by molecular beam epitaxy on silicon substrates with the use of CaF 2 buffer layer. The films were doped during the growth with samarium either from SmF 3 molecular or Sm atomic beams. The excitation wavelength was scanned in the region of 6 H 5/2 → 4 G 5/2 transitions of Sm 3+ as well as near the absorption edge of the Mn 2+ 3d excitons of the tetragonal and orthorhombic phases of MnF 2 . The observed emission lines have been assigned to two types of (Sm 3+ –F − ) centers in the orthorhombic phase and one in the tetragonal rutile phase of MnF 2 . Efficient energy transfer from the host lattice to Sm 3+ centers was observed during excitation into the lowest Mn 2+ absorption band. Similar centers were also found in ZnF 2 epitaxial films, where along with (Sm 3+ –F − ) pair centers, an isolated Sm 3+ center with remote charge compensation was observed. Thus it was shown that Sm 3+ ions can be used as efficient luminescent probe for characterization of crystal phase composition in the films as well as the local environment of the dopants. |
Databáze: | OpenAIRE |
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