Passivation of copper films with magnesium doping using recoil ion implantation
| Autor: | Zhen-Cheng Wu, Mao-Chieh Chen, Yu-Lin Liu |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Passivation
Chemistry Magnesium Inorganic chemistry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Barrier layer Ion implantation X-ray photoelectron spectroscopy Transition metal Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 358:180-186 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(99)00660-4 |
| Popis: | This work investigates the effects of Ar + ion implantation through a multilayer structure of SiO 2 (100 nm)/Mg(20 nm)/Cu/SiO 2 /Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5×10 15 cm −2 significantly enhances the oxidation resistance at temperatures up to 375°C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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