Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications
| Autor: | Hee-Hwan Ji, Hi-Deok Lee, Du-Eung Kim, Younghwan Son, Han-Soo Joo, Ook-Sang Yoo, Tae-Gyu Goo, In-Shik Han, Chang-Ki Baek, Won-Ho Choi |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Analytical chemistry Oxide Equivalent oxide thickness Time-dependent gate oxide breakdown Computer Science Applications Tunnel effect chemistry.chemical_compound Nanoelectronics chemistry Gate oxide MOSFET Remote plasma Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nanotechnology. 8:654-658 |
| ISSN: | 1941-0085 1536-125X |
| DOI: | 10.1109/tnano.2008.2009760 |
| Popis: | This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunction with the tunneling model of trapped charges. Nitrided oxide is widely used to improve the reliability of nanoscale MOSFETs because it can decrease the degradation of gate oxide due to the generation of traps therein. Based on the measurement, the optimum nitrogen concentration in such typical nitrided process is discussed in correlation with the gate oxide thickness for nanoscale CMOSFETs. |
| Databáze: | OpenAIRE |
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