Percolation problem in boron—Implanted mercury cadmium telluride
| Autor: | N. Mainzer, Emil Zolotoyabko |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Diffraction
Materials science Solid-state physics Annealing (metallurgy) Scanning electron microscope Analytical chemistry chemistry.chemical_element Percolation threshold Conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Crystallography chemistry Materials Chemistry Mercury cadmium telluride Electrical and Electronic Engineering Boron |
| Zdroj: | Journal of Electronic Materials. 29:792-797 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-000-0226-x |
| Popis: | We used high-resolution x-ray diffraction to measure precisely structural modifications in variously composed Hg1−xCdxTe layers which were fabricated by different growth techniques and subjected to boron implantation to form p-n junctions. Analysis of implantation-induced features in the diffraction profiles allowed us to deduce the interstitials concentration remaining in the sample interior and, thus, to obtain important information on post-implantation defect migration. As a result, a percolation problem in the migration of Cd interstitials was discovered in samples with x |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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