| Autor: |
Bigang Min, A. Shanware, Keith Green, James J. Chambers, Antonio L. P. Rotondaro, Siva Prasad Devireddy, Zeynep Celik-Butler, Luigi Colombo, Mark R. Visokay |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices. 53:1459-1466 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/ted.2006.874759 |
| Popis: |
Low-frequency noise measurements and analysis were performed on n-channel MOSFETs with HfSiON as the gate-dielectric material. The role of SiON interfacial-layer thickness was investigated. It was observed that these fluctuations can be described by the unified flicker-noise model that attributes noise to correlated carrier-number/mobility fluctuations due to trapping states in the gate dielectric. The model was modified to include the effect of different gate stack layers on the observed noise. The carrier-number fluctuations were found to dominate over the correlated mobility fluctuations in the measured bias range and more so at the lower gate overdrives. The noise magnitude showed a decrease with increasing SiON interfacial-layer thickness. Furthermore, an inverse-proportionality relationship was revealed between the effective oxide trap density and SiON thickness. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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