Monolithic 40 GHz Passively mode locked AlGaInAs/InP 1.55 μm MQW Laser with Surface-Etched Bragg Gratings

Autor:	John M. Arnold, B.C. Qiu, R.M. De La Rue, Lianping Hou, A.C. Bryce, Marc Sorel, Anthony Kelly, P. Stolarz, John H. Marsh, R. Dylewicz, M. Haji
Rok vydání:	2010
Předmět:	Materials science business.industry Laser Semiconductor laser theory law.invention chemistry.chemical_compound Wavelength Laser linewidth Optics Mode-locking chemistry law Indium phosphide Optoelectronics Maser business Electron-beam lithography
Zdroj:	Conference on Lasers and Electro-Optics 2010.
Popis:	We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 µm lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low loss and accurate wavelength control. The lasers produce 10-ps Gaussian-pulses with TBP of 0.75.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::01665a026fcb51c16797aa6587409b1b https://doi.org/10.1364/cleo.2010.cmii3 Zobrazit plný text záznamu